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Y. Polyakov, Q. Li, M. R. E. V. A. Fanton, and N. B. Smirnov, J. Appl. Phys. 99 (2006) 013508. J. H. R. Kim, The effects of C3H8 on the chemical vapor deposition of silicon carbide in CH3SiCl3+H2 system, J. Eur. Ceram. Soc. 9 (1992) 357-363. [10] F. Liao, S. M. L. Girshick, High-rate chemical vapor deposition of nanocrystalline silicon carbide films by radio frequency thermal plasma, Mater. Lett. 57 (2003) 1982-1986. S. S. Choi, The reactant depletion effect on chemically vapor deposited SiC films with pressure and gas ambient, Thin Solid Films.

Were used as the starting powders. Three batches of powder were mixed, each containing 99 vol% SiC (α and/or β) and 1 vol% Y2O3-Sc2O3 additives (Y2O3:Sc2O3= 1:1 in molar ratio). The relative content of α-SiC powder in those batches was 10, 50, and 100 vol% (Table 1). All individual batches were mixed by ball milling using SiC media in a polypropylene jar for 24 h in ethanol. The mixture was dried, sieved (60 mesh), and hot pressed at 2050oC for 6 h under 40 MPa of pressure in a nitrogen atmosphere.

Cheng, Key Eng. Mater. 237 (2003) 105-110. [15] D. Hiratuska, J. Tatami, T. Meguro, K. Komeya, I. -F. Yang, M. Omori, Key Eng. Mater. 317-318 (2006) 633-636. L. Fu, S. Agathopoulos, Adv. Appl. Ceram. 108 (2009) 358-362. -H. H. -A. Wang, K. Nayak. -L. Hwang, J. Am. Ceram. Soc. 94 (2011) 1182-1190. [18] K. A. H. Yu, F. Boey, Mater. Sci. Eng. A 347 (2003), 300-305. A. G. Yu, Y. Murakoshi, J. Eur. Ceram. Soc. 25 (2005) 1057-1065. -H. -S. -P. -H. -H. B. Shim, J. Ceram. Process. Res. 10 (2009) 109-112.

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